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FDT86246L

N-Channel PowerTrench MOSFET

Description

FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a wid...

Fairchild Semiconductor

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