PowerTrench MOSFET. FDT86246L Datasheet

FDT86246L MOSFET. Datasheet pdf. Equivalent

Part FDT86246L
Description N-Channel PowerTrench MOSFET
Feature FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 .
Manufacture Fairchild Semiconductor
Datasheet
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FDT86246L
February 2016
FDT86246L
N-Channel PowerTrench® MOSFET
150 V, 2 A, 228 mΩ
Features
General Description
„ Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A
„ Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
has been optimized for rDS(on), switching performance and
ruggedness.
Applications
„ Load Switch
„ Primary Switch
„ Buck/Boost Switch
D
D
SOT-223
S
D
G
GDS
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
2
20
6
2.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
12
55
°C/W
Device Marking
86246L
Device
FDT86246L
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2016 Fairchild Semiconductor Corporation
FDT86246L Rev. 1.0
1
www.fairchildsemi.com



FDT86246L
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
150 V
110 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
0.8 1.6 2.5 V
ID = 250 μA, referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 2 A
VGS = 4.5 V, ID = 1.8 A
VGS = 10 V, ID = 2 A, TJ = 125 °C
VDS = 10 V, ID = 2 A
189 228
208 280 mΩ
375 452
7.3 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
238 335 pF
20 30 pF
2 5 pF
0.1 0.9 2.7 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 75 V, ID = 2 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
VDD = 75 V,
ID = 2 A
4.5 10 ns
1.3 10 ns
11 20 ns
2 10 ns
4.5 6.3 nC
2.3 3.3 nC
0.7 nC
1.0 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A
(Note 2)
0.8 1.3 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 2 A, di/dt = 100 A/μs
44 71 ns
31 50 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 55 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 118 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 6 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 2 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 7 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2016 Fairchild Semiconductor Corporation
FDT86246L Rev. 1.0
2
www.fairchildsemi.com





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