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BDT31DF

Part Number	BDT31DF
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistors
Published	Sep 29, 2018
Detailed Description	isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-...
Datasheet	BDT31DF PDF File

Overview

isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.
0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF ·Complement to Type BDT32F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT BDT31F 80 VCBO Collector-Base Voltage BDT31AF 100 BDT31BF 120 V BDT31CF 140 BDT31DF 160 BDT31F 40 VCEO Coll...

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