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SILICON TRANSISTORS. 2N4922 Datasheet

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SILICON TRANSISTORS. 2N4922 Datasheet






2N4922 TRANSISTORS. Datasheet pdf. Equivalent




2N4922 TRANSISTORS. Datasheet pdf. Equivalent





Part

2N4922

Description

MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS



Feature


2N4921 thru 2N4923 (SILICON) MJE4921 thr uMJE4923 MEDIUM·POWER PLASTIC NPN SIL ICON TRANSISTORS · .. designed for dri ver circuits, switching, and amplifier applications. These high·performance p lastic devices feature: • Low Saturat ion Voltage -VCE(sat)= 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissip ation Due to Thermopad Construction - P D = 30 and 40 W @ T C = 2.
Manufacture

Motorola

Datasheet
Download 2N4922 Datasheet


Motorola 2N4922

2N4922; 50 e • Excellent Safe Operating Area Gain Specified to Ie = 1.0 Amp • C omplement to PNP 2N4918, 2N4919, 2N4920 and MJE4918, MJE4919, MJE4920 • Choi ce of Packages - 2N4921 thru 2N4923, 30 Watts - Case 77 MJE4921 thru MJE4923, 40 Watts - Case 199 'MAXIMUM RATINGS R ating Collector-Emitter Voltage Collect or-Base Voltage Emitter-Base Voltage Co llector Current Continuous.


Motorola 2N4922

(11 Base Current Continuous Total Devic e Dissipation @TC '" 25D C Derate above 2SoC Operating & Storage Junction Temp erature Range 2N4921 2N4922 2N4923 Sym bol MJE4921 MJE4922 MJE4923 VeEO VeB V Ee Ie Ie Po 40 40 2N4921 Series 30 0.2 4 60 80 6 .


Motorola 2N4922

.

Part

2N4922

Description

MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS



Feature


2N4921 thru 2N4923 (SILICON) MJE4921 thr uMJE4923 MEDIUM·POWER PLASTIC NPN SIL ICON TRANSISTORS · .. designed for dri ver circuits, switching, and amplifier applications. These high·performance p lastic devices feature: • Low Saturat ion Voltage -VCE(sat)= 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissip ation Due to Thermopad Construction - P D = 30 and 40 W @ T C = 2.
Manufacture

Motorola

Datasheet
Download 2N4922 Datasheet




 2N4922
2N4921 thru 2N4923 (SILICON)
MJE4921 thruMJE4923
MEDIUM·POWER PLASTIC NPN SILICON
TRANSISTORS
· .. designed for driver circuits, switching, and amplifier applications.
These high·performance plastic devices feature:
• Low Saturation Voltage -VCE(sat)= 0.6 Vdc (Max) @ IC = 1.0 Amp
• Excellent Power Dissipation Due to Thermopad
Construction - PD = 30 and 40 W @ T C = 250 e
• Excellent Safe Operating Area
• Gain Specified to Ie = 1.0 Amp
• Complement to PNP 2N4918, 2N4919, 2N4920 and MJE4918,
MJE4919, MJE4920
• Choice of Packages - 2N4921 thru 2N4923, 30 Watts - Case 77
MJE4921 thru MJE4923, 40 Watts - Case 199
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous (11
Base Current Continuous
Total Device Dissipation @TC '" 25D C
Derate above 2SoC
Operating & Storage Junction
Temperature Range
2N4921 2N4922 2N4923
Symbol MJE4921 MJE4922 MJE4923
VeEO
VeB
VEe
Ie
Ie
Po
40
40
2N4921
Series
30
0.24
60 80
60 80
5.0
1.0
3.0
1.0_
MJE4921
Series
40
0.32
TJ, Tstg - - -65 to +150--
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
WIDe
°e
THERMAL CHARACTERISTICS (2)
Characteristic
Thermal Resistance, Junction to Case
(1) The 1.0 Amp maximum Ie value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current-handling capability of the device
(see Figure. 5 and 6).
(2) Recommend use of thermal compou~d for lowest thermal resistance.
·'ndicates JEDEC Registered Data for 2N4921 Series.
FIGURE 1 - POWER DERATING
40
'"""" '"""'~
...........
...... ' " MJE4921thru MJE4923
..........
I'---- ~
r ""- '"'"2N4921thru 2N4923
............ I'-.......... ~
0 ~t.....
"-.....;:
0
25 50 75 100 125 150
TC. CASE TEMPERATURE (DCI
Safe Area Curves are indicated by Figures 5 and 6. All limits are applicable and must be ob.rved
3AMPERE
GENERAL PURPOSE
POWER TRANSISTORS
40-80 VOLTS
30 and 40 WATTS
I
2N4921
2N4922
2N4923
PIN 1. EMITTER
2. COLLECTOR
3. BASE
r~~~
0.148 !
~L - '
0) 15 0IA.THRU
0.118
~f
a0.4:m25
~--+
II g~~:: ~
U __~
-1Ji~:""D.O"TP
0025
0.015 -
Ulf35
0015
0.045
~
~.13~~DID5
HEATSINK
CONTACT AREA
IBOTTOM)
Case 77·03
Style 1
30
TYP
o0.;2m75.
o0.1:m42
MJE4921
MJE4922
MJE4923
'Oimension is to centerline of leads
C... l99·04
Style 1
PIN 1. BASE
2. COLLECTOR
3. EMITTER
2-864




 2N4922
2N4921 thru 2N4923, MJE4921 thru MJE4923(continued)
*ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(lC = 0.1 Ade,IB = 0)
2N4921, MJE4921
2N4922, MJE4922
2N4923, MJE4923
Collector Cutoff Current
(VCE = 20 Vde, IB = 0)
(VCE = 30 Vde, IB = 0)
(VCE = 40 Vde, IB = 0)
2N4921, MJE4921
2N4922, MJE4922
2N4923, MJE4923
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vde)
(VCE = Rated VCEO, VEB(off) = 1.5 Vde, TC = 1250 C)
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vde, Ie = 0)
ON CHARACTERISTICS
DC Current Gain (1)
(lc = 50 mAde, VCE = 1.0 Vde)
(lc = 500 mAde, VCE = 1.0 Vde)
(lC = 1.0 Ade, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage (1)
(lC = 1.0 Ade,IB = 0.1 Ade)
Base-E mitter Saturation Voltage (1)
lie = 1.0 Ade,IB = 0.1 Ade)
Base-Emitter On Voltage (1)
(lc = 1.0 Ade, VCE = 1.0 Vde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 250 mAde, VCE = 10 Vde, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Small-5ignal Current Gain
(lC = 250 mAde, VCE = 10 Vde, f = 1.0 kHz)
(1) Pulse Test: PW~300JJs. Duty Cvcle~2.0%.
·'ndicates JEDEC Registered Data for 2N4921 Series.
-
-
13
-
-
9
10
12
14
12
14
12
14
-
-
-
VCEO(sus)
ICEO
ICEK
ICBO
lEBO
hFE
VCE(sad
VBE(sat)
VBE(on)
fT
Cob
hfe
40
60
80
-
-
-
-
-
-
-
40
20
10
-
-
-
3.0
-
25
Vde
-
-
-
mAde
0.5
0.5
0.5
mAde
0.1
0.5
mAde
0.1
mAde
1.0
-
-
100
-
Vde
0.6
Vde
1.3
Vde
1.3
MHz
-
pF
100
-
-
FIGURE 2 - SWITCHING TIME EQUIVALENT CIRCUIT
f'I 1APPROXI ,TURN,-ON PULSE
+llV I
~I,
-Vi,
------
VeeO-~---,
Vi, o-"WO.--.pf-{
I
VlEloHl I
II
APPROX
+llV
I, 1,$ 15n.
100 < I, $ 500 p.s
1,$ 15ns
DUTY CYCLE" 2.0%
APPROX 9.0 V
I, t--
TURN-OFF PULSE
FIGURE 3 -.TURN·ON TIME
5,0
3.0
2.0
~
]. 1.0
.... O.7
~ 0.5 Vee
30V
Vee-30V
Ie/I, V2~0e ~ ~OIV
~
. .j...
I,
Ie"; = 11O~ UN~ESslNM
TJ = 25°C
.L1TJ=150°C
0.3 .,-r- Vee 60V
i>- VlEloHI 2.0 V
,0.2 "-
i'"
O. 1
0.07
Vee
VlEloHl
30
V
a
~
0.05
10
20 30 50 70 100
200 300
Ie, COLLECTOR CURRENT ImAI
500 700 1000




 2N4922
2N4921 thru 2N4923, MJE4921 thru MJE4923 (continued)
FIGURE 4 - THERMAL RESPONSE
0.71--1- D 0.5
0.5
.«...w6
::EN
0.3
a::::l
1'0~~~~~~~~~~~~~i!~~~~~~~1l~~~"~~~~~~~~~~~~~~~~~1l%::E
0.2
0.2
0.1
8Jcltl ,(t)(JJC
r - -1 - " ,
1-0
~~
~~~ig~III~§"",w
0.1
~~ttITifLJ1' ~I~~t -MJE~49121~'2g3~mll~~ ~ 0.07
0.05
0.01
8JC 4.I6°C/W Max 2N4921·23H-H+++-t1
0
8DJCcU=R3V.£1S2A5PPCLIYWFMORaxPOWER
~~
~v.;
-""::!
000...0005321~-..=..i...=t=.i...1==E~tiSfINiGtLE=P=U1LS~E=t=r=t=r~~t:~~~~i~,~-r!II,i' ~a===i=~T~JIH~HP'+~-I+~--+:TPR~UEeALD:SE;TTIPMR~AEIINAIPSIH~•O1W1N~8~JcI~t~I~l=~~i=~~~
mI I III D~Tr lE• D=1./1, --+I-+++Iffi+---t---t-tl-t---t-tl--+I+-H11+--1--+1-+++-++++++1
0.01 '-~~~-:-'-~I-L-U:L:---'---::-':-'-7:--'-:':-'...L..l-':':---'-:!--:-'--f::---'-:'-:-'-.J....L.'::':----I.-f:"""~"--:-:-'--u.!'-...J....-:'-~:--'---'-J...J..J....U
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20 30 50 100 200 300 500 1000
I. TIME (msJ
ACTIVE - REGION SAFE OPERATING AREA
FIGURE 5 - 2N4921 thru 2N4923
0
1.0
~ 5.0
:$ 3.0
-r--..... ..... 1.0ms-
1OO ps
iZ
~ 2.0
TJ= 150°C
1' ..... 5.0m" ... \.
a:
i:l de '\.
a: 1.0
~ ~:o 1
SECOND BREAKOOWN
LIMITED
5 - - - - - BONDING WIRE LIMITED
\
o - - - - - - - THERMAllY LIMITED @TC - 25°C
II~ O.3 ~lSE CURVES APPLY BELDW
0.2 _RATED VCED
TO.1 '1 I j I II
1.0 2.0 3.0 5.0 1.0 10 20 30 50 10 100
FIGUR E 6 - MJE4921 thru MJE4923
0
1.0 lOOms
tL 5.0
~ 3.0
I-
~ 2.0
~ f---
:::>
~ 1.0
~o ~:51
5.0 ms-" I- p-.;-1.0 ms
TJ1150~C
,t... \\.
"\. \
SECDND BREAKDOWN
LIMITED
H~r
o.3
-
-
-- -
- -- -
- BONDING WIRE LIMITED
--THERMAllY lIMITED@TC=250 C
0.2
'\.
I\.
PULSE CURVES APPLY BElDW
O. 1 RATEO VCEO
1.0 2.0 3.0 5.0 1.0 10 20 30 50 10 100
VCE. CDllECTOR·EMITTER VOLTAGE (VDLTS)
VCE. COLlECTOR·EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe oper-
ating area curves indicate le·VeE operation, i.e., the transistor J.I1ust not be subjected to greater dissipation than the curves indicate.
The dala of Figures 5 and 6 is based on TJjpk) = 15O"C; TC is variable depending on conditions. Second breakdown pulse limits are valid
for duty cveles to 10% provided TJ(pk)';;; 15O"C. At high case temperatures, thermal limitations will reduce the power that can be handled to
values less than the limitations imposed bV second breakdown. (See AN-415)
FIGURE 7 - STORAGE TIME
-- -5.0 -.!s:/I, 10
3.0
2.0
-
... =~
1.0
~ 0.7
1\
Ie/I, 20
I 0.5
0.3
--::=r=:r~
0:2
IJ = 25°C
~~:~r""0.1
0.07
1I "; ==1115,.0.-°C~!r
0.05
10
20 30 50 70
lel l, 20
:..c;.,
- I ..... ~
100 200 300
Ie. COllECIOR CURRENT (mA)
500 700 1000
FIGURE 8 - FALL TIME
5.0
3.0
--2.0
"
r-..
"
11.0
lel , 20
'
'3.
t"" ......
~ 0.7
::j 0.5 !==Ie/I, = 10
~
.:5 0.3
--10-.
0.2
O. I
0.0.7
0.05
10
IJ =25°C
- - - IJ = 150°C
Vee=30V
1,,= I"
20 30 50 70 100
200 300
Ie. COLLECTOR CURRENT (mA)
500 700 1000
2-266



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