P-CHANNEL TRANSISTORS. IRFF9130 Datasheet

IRFF9130 TRANSISTORS. Datasheet pdf. Equivalent


International Rectifier IRFF9130
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE - TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF9130 -100V 0.30
ID
-6.5A
PD-90550E
IRFF9130
JANTX2N6849
JANTXV2N6849
JANS2N6849
REF:MIL-PRF-19500/564
100V, P-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
-6.5
-4.1
-25
25
0.20
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
92
-6.5
2.5
-5.5
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
07/28/15


IRFF9130 Datasheet
Recommendation IRFF9130 Datasheet
Part IRFF9130
Description P-CHANNEL TRANSISTORS
Feature IRFF9130; REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) Product Summar.
Manufacture International Rectifier
Datasheet
Download IRFF9130 Datasheet




International Rectifier IRFF9130
IRFF9130
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min Typ Max Units
-100 — —
V
— -0.10 — V/°C
— — 0.30
— — 0.345
-2.0 — -4.0 V
2.5 — —
S
— — -25
— — -250 µA
— — -100
— — 100 nA
14.7 — 34.8
1.0 — 7.1 nC
2.0 — 21
— — 60
140
140
ns
— — 140
— 7.0 — nH
— 800
— 350 —
— 125 —
pF
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -4.1A „
VGS = -10V, ID =- -6.5A „
VDS = VGS, ID = -250µA
VDS = -15V, IDS = -4.1A „
VDS= -80V, VGS= 0V
VDS = -80V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -6.5A
VDS= -50V
VDD = -50V, ID = -6.5A,
VGS = -10V, RG = 7.5
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) 
— — -6.5
— — -25
A
VSD Diode Forward Voltage
— — -4.7 V
Tj = 25°C, IS = -6.5A, VGS = 0V „
trr Reverse Recovery Time
— — 250 ns Tj = 25°C, IF = -6.5A, di/dt -100A/µs
QRR Reverse Recovery Charge
— — 3.0 µC
VDD -50V „
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
— — 5.0
— — 175
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2 www.irf.com



International Rectifier IRFF9130
IRFF9130
Fig1. TypicalOutputCharacteristics
Fig2. TypicalOutputCharacteristics
Fig3. TypicalTransferCharacteristics
www.irf.com
Fig4. NormalizedOn-Resistance
Vs.Temperature
3





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