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HM2309

H&M Semiconductor

P-Channel Enhancement Mode Power MOSFET


Description
HM2309 P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦215mΩ@VGS=-10V ● RDS(ON)≦260mΩ@VGS=-4.5V ● Super high density cell ...



H&M Semiconductor

HM2309

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