HM4612D
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel VDS =12V,ID =5A RDS(ON) <32mΩ @ VGS=4.5V RDS(ON) <...
