DatasheetsPDF.com

HM2302F

N-Channel Enhancement Mode Power MOSFET

Description

HM2302F N-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 2.8A RDS(ON) < 50mΩ @ VGS=2.5V RDS...

H&M Semiconductor

Download HM2302F Datasheet

Similar Datasheet

HM2300 N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300B N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300C N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300D N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300DR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300PR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2301 Digital-output humidity and temperature sensor - Hanwei
HM2301A P-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2301B P-Channel Trench Power MOSFET - H&M Semiconductor
HM2301BJR P-Channel MOSFET - H&M Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)