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HM2306

N-Channel Enhancement Mode Power MOSFET

Description

HM2306 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON...

H&M Semiconductor

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