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NCE N-Channel Enhancement Mode Power MOSFET
Description
The HM5N06R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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General Features
● VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V
（Typ：38mΩ）
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Schematic diagram
Application
● Power switching application ●...
