Final data
SPP11N60C2, SPB11N60C2 SPA11N60C2
Cool MOS™ Power Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
Product Summary
VDS @ Tjmax 650
RDS(on)
0.38
ID 11
V Ω A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Type SPP11N60C2 SPB11N60...
