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FIELD EFFECT POWER TRANSISTOR
IRFD222,223
0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applicatio...
