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SE3035

Sino-IC

N-Channel MOSFET


Description
Apr 2015 SE3035 N-Channel Enhancement-Mode MOSFET Revision: A General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 5.5mΩ @ VGS=10 ...



Sino-IC

SE3035

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