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POWER TRANSISTOR. D560 Datasheet

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POWER TRANSISTOR. D560 Datasheet






D560 TRANSISTOR. Datasheet pdf. Equivalent




D560 TRANSISTOR. Datasheet pdf. Equivalent





Part

D560

Description

SILICON POWER TRANSISTOR



Feature


www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EP ITAXIAL TRANSISTOR (DARLINGTON CONNECTI ON) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for l owfrequency power amplifiers and low-sp eed switching. This transistor is ideal for direct driving from the IC output of devices such as.
Manufacture

NEC

Datasheet
Download D560 Datasheet


NEC D560

D560; pulse motor drivers and relay drivers, and PC terminals. FEATURES • C-to-E reverse diode inserted • Low collecto r saturation voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collect or to base voltage Collector to emitter voltage Emitter to base voltage Collec tor current (DC) Collector current (pul se) Base current (DC) Total power dissi pation Junction tempera.


NEC D560

ture Storage temperature Symbol VCBO VC EO VEBO IC(DC) IC(pulse) IB(DC) PT Tj T stg Conditions Ratings Unit 150 V 1 00 V 7.0 V Data±S5h.0eet4U.cAom PW 10 ms, duty cycle ≤ 50% ±8.0 A 0.5 A TC = 25°C 30 W TA = 25°C 1 .5 W 150 °C −55 .


NEC D560

.

Part

D560

Description

SILICON POWER TRANSISTOR



Feature


www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EP ITAXIAL TRANSISTOR (DARLINGTON CONNECTI ON) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for l owfrequency power amplifiers and low-sp eed switching. This transistor is ideal for direct driving from the IC output of devices such as.
Manufacture

NEC

Datasheet
Download D560 Datasheet




 D560
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DATA SHEET
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD560 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
FEATURES
• C-to-E reverse diode inserted
• Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
Ratings Unit
150 V
100 V
7.0 V
Data±S5h.0eet4U.cAom
PW 10 ms,
duty cycle 50%
±8.0
A
0.5 A
TC = 25°C
30 W
TA = 25°C
1.5 W
150 °C
55 to +150 °C
ORDERING INFORMATION
Ordering Name
2SD560
Package
TO-220AB
(TO-220AB)
INTERNAL EQUIVALENT CIRCUIT
DataShee
1. Base
2. Collector
3. Emitter
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14863EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DataSheet4 U .com
©
21090928




 D560
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
tstg
tf
VCB = 100 V, IE = 0 A
VCE = 2.0 V, IC = 3.0 ANote
VCE = 2.0 V, IC = 5.0 ANote
IC = 3.0 A, IB = 3.0 mANote
IC = 3.0 A, IB = 3.0 mANote
IC = 3.0 A, RL = 16.7 ,
IB1 = IB2 = 3.0 mA, VCC 50 V
Refer to the test circuit.
Note Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE1
MB
2,000 to 5,000
LB
3,000 to 7,000
KB
5,000 to 15,000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
2SD560
MIN.
2,000
500
TYP.
6,000
MAX.
1.0
15,000
0.9 1.5
1.6 2.0
1.0
3.5
1.2
Unit
µA
V
V
µs
µs
µs
et4U.com
Base current
waveform
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Collector current
waveform
DataShee
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2
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Data Sheet D14863EJ3V0DS




 D560
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TYPICAL CHARACTERISTICS (TA = 25°C)
Heatsink’: 2.0 mm
Aluminum, bpard
No insulating boad
Silicon brease coating
Horizontal level
With infinite heatsink (Tc = 25°C)
2SD560
et4U.com
Without heatsink
Temperature T (°C)
Single pulse
Collector to Emitter Voltage VCE (V)
Pulse test
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Collector to Emitter Voltage VCE (V)
Pulse test
Collector Current IC (A)
DataShee
Collector Current IC (A)
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Data Sheet D14863EJ3V0DS
3



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