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BAS116GW

nexperia

Low leakage switching diode


Description
BAS116GW Low leakage switching diode 5 April 2018 Product data sheet 1. General description Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: trr = 0.8 µs Low leakage current: IR = 3 pA Repetitive peak reverse voltage VRRM ≤ 85 V Low capacitance...



nexperia

BAS116GW

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