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MJD31CA

3A NPN high power bipolar transistor

Description

MJD31CA 100 V, 3 A NPN high power bipolar transistor 23 May 2019 Preliminary data sheet 1. General description NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation ...

nexperia

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