DatasheetsPDF.com

MJD31B

ST Microelectronics
Part Number MJD31B
Manufacturer ST Microelectronics
Description Complementary Silicon Power Transistors
Published May 7, 2005
Detailed Description ® MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFA...
Datasheet PDF File MJD31B PDF File

MJD31B
MJD31B

Overview
® MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C 3 1 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs.
They are manufactured using Epitaxial Base technology for cost-effective performance.
DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc = 25 C Storage T emperature Max.
O perating Junction Temperature o Value MJD31B MJD32B 80 80 5 3 5 1 15 -65 to 150 150 MJD31C MJD32C 100 100 Uni t V V V A A A W o o C C For PNP types the values are intented negative.
May 1999 1/5 MJD31B/31C - MJD32B/32C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.
33 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO V CEO(sus) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitt er Voltage DC Current Gain Dynamic Current G ain Test Cond ition s V CE = Max Rating V CE = 60 V V EB = 5 V I C = 30 mA for MJD31B/32B for MJD31C/32C IC = 3 A IC = 3 A IC = 1 A IC = 3 A I C = 0.
5 A I C = 0.
5 A IB = 375 mA V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V V CE = 10 V f = 1 KHz f = 1 MHz 25 10 20 3 Min.
Typ .
Max.
20 50 0.
1 Un it µA µA mA 80 100 1.
2 1.
8 50 V V V V V CE(sat )∗ V BE(on) ∗ h F E∗ h fe ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP t...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)