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MJD31C

Part Number	MJD31C
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 6, 2016
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Volt...
Datasheet	MJD31C PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Complement to Type MJD32C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Ju...

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