PBSS4112PAN Datasheet (data sheet) PDF





PBSS4112PAN Datasheet, 1A NPN/NPN low VCEsat (BISS) transistor

PBSS4112PAN   PBSS4112PAN  

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PBSS4112PAN 120 V, 1 A NPN/NPN low VCEs at (BISS) transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/NPN low V CEsat Breakthrough In Small Signal (BIS S) transistor in a leadless medium powe r DFN2020-6 (SOT1118) Surface-Mounted D evice (SMD) plastic package. NPN/PNP co mplement: PBSS4112PANP. PNP/PNP complem ent: PBSS5112PAP. 1.2 Featu

PBSS4112PAN Datasheet, 1A NPN/NPN low VCEsat (BISS) transistor

PBSS4112PAN   PBSS4112PAN  
res and benefits • Very low collector- emitter saturation voltage VCEsat • H igh collector current capability IC and ICM • High collector current gain hF E at high IC • Reduced Printed-Circui t Board (PCB) requirements • High ene rgy efficiency due to less heat generat ion • AEC-Q101 qualified 1.3 Applica tions • Load switch • Battery-drive n devices • Power management • Charging circ








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