2N2906E TRANSISTOR Datasheet

2N2906E Datasheet PDF, Equivalent


Part Number

2N2906E

Description

EPITAXIAL PLANAR PNP TRANSISTOR

Manufacture

KEC

Total Page 4 Pages
Datasheet
Download 2N2906E Datasheet


2N2906E
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
@VCE=-30V, VEB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
Low Collector Output Capacitance
: Cob=4.5pF(Max.) @VCB=5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
-40
-40
-5
-200
-50
200
150
-55 150
UNIT
V
V
V
mA
mA
mW
2N2906E
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
A1 1.0 +_ 0.05
2 5 B 1.6+_ 0.05
B1 1.2 +_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
J 0.12+_ 0.05
PP
P5
1. Q1 EMITTER
2. Q1 BASE
3. Q2 BASE
4. Q2 COLLECTOR
5. Q2 EMITTER
6. Q1 COLLECTOR
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1 Q2
12 3
Marking
Type Name
ZA
2002. 9. 17
Revision No : 0
1/4

2N2906E
2N2906E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
*
ICEX
IBL
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
hie
hre
hfe
hoe
Noise Figure
NF
Delay Time
td
TEST CONDITION
VCE=-30V, VEB=-3V
VCE=-30V, VEB=-3V
IC=-10 A, IE=0
IC=-1mA, IB=0
IE=-10 A, IC=0
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, IE=0, f=1MHz
VBE=-0.5V, IC=0, f=1MHz
VCE=-10V, IC=-1mA, f=1kHz
VCE=-5V, IC=-0.1mA,
Rg=1k , f=10Hz 15.7kHz
Vout
10k
Vin
C Total 4pF
MIN.
-
-
-40
-40
-5.0
60
80
100
60
30
-
-
-0.65
-
250
-
-
2.0
1.0
100
3.0
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-50
-50
-
-
-
-
-
300
-
-
-0.25
-0.4
-0.85
-0.95
-
4.5
10
12
10
400
60
UNIT
nA
nA
V
V
V
V
V
MHz
pF
pF
k
x10-4
- 4.0 dB
- 35
Switching Time
Rise Time
Storage Time
tr
tstg
Fall Time
tf
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
0.5V
-10.6V
0 VCC =-3.0V
tr ,t f < 1ns, Du=2%
300ns
Vout
Vin 10k
1N916
or equiv.
9.1V
-10.9V
20µs
C Total 4pF
VCC =-3.0V
0
t r,t f < 1ns, Du=2%
-
-
-
- 35
nS
- 225
- 75
2002. 9. 17
Revision No : 0
2/4


Features SEMICONDUCTOR TECHNICAL DATA GENERAL PUR POSE APPLICATION. SWITCHING APPLICATION . FEATURES Low Leakage Current : ICEX=- 50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Line arity. Low Saturation Voltage : VCE(sat )=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low C ollector Output Capacitance : Cob=4.5pF (Max.) @VCB=5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Ba se Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current Ba se Current Collector Power Dissipation Junction Temperature Storage Temperatur e Range * Total Rating VCBO VCEO VEBO IC IB PC Tj Tstg RATING -40 -40 -5 -20 0 -50 200 150 -55 150 UNIT V V V mA mA mW H A A1 CC 2N2906E EPITAXIAL PLAN AR PNP TRANSISTOR B B1 1 6 DIM MILLIMET ERS A 1.6+_ 0.05 A1 1.0 +_ 0.05 2 5 B 1 .6+_ 0.05 B1 1.2 +_ 0.05 3 4 C 0.50 D 0 .2+_ 0.05 H 0.5+_ 0.05 J 0.12+_ 0.05 PP P5 1. Q1 EMITTER 2. Q1 BASE 3. Q2 BASE 4. Q2 COLLECTOR 5. Q2 EMITTER 6. Q1 CO LLECTOR TES6 EQUIVALENT CIRCUIT (TOP VIEW) 65 4 Q1 Q2 12 3 JD .
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