2N2907A Transistors Datasheet

2N2907A Datasheet PDF, Equivalent


Part Number

2N2907A

Description

Radiation Hardened PNP Silicon Switching Transistors

Manufacture

VPT

Total Page 8 Pages
PDF Download
Download 2N2907A Datasheet PDF


2N2907A
2N2906A, L, UA, UB
2N2907A, L, UA, UB
Radiation Hardened PNP Silicon Switching Transistors
Features
Qualified to MIL-PRF-19500/291
Available in JAN, JANTX, JANTXV, JANS and JANSR
Rad Hard Levels M, D, P, L and R
TO-18, Surface Mount UA & UB Packages
Applications
Switching and Linear Applications
DC and VHF Amplifier Applications
Rev. V3
Electrical Specifications (TA = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Units Minimum Maximum
Collector - Emitter Breakdown
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
IC = -10 mA dc
VCB = -60 V dc
VCB = -50 V dc
VEB = -5.0 V dc
VEB = -4.0 V dc
VCE = -50 V dc
V(BR)CEO V dc
ICBO1
ICBO2
IEBO1
IEBO2
µA dc
nA dc
µA dc
nA dc
ICES nA dc
-60
-10
-10
-10
-50
-50
Forward Current Transfer Ratio
Collector - Base Cutoff Current
Base - Emitter Saturation Voltage
Collector - Base Cutoff Current
Forward Current Transfer Ratio
1
2N2906A, L, UA, UB
VCE = -10 V dc: IC = -0.1 mA dc
VCE = -10 V dc; IC = -1.0 mA dc
VCE = -10 V dc; IC = -10.0 mA dc
VCE = -10 V dc; IC = -150.0 mA dc
VCE = -10 V dc; IC = -500.0 mA dc
2N2907A, L, UA, UB
VCE = -10 V dc; IC = -0.1 mA dc
VCE = -10 V dc; IC = -1.0 mA dc
VCE = -10 V dc; IC = -10.0 mA dc
VCE = -10 V dc; IC = -150.0 mA dc
VCE = -10 V dc; IC = -500.0 mA dc
IC = -150 mA dc, IB = -15 mA dc
IC = -500 mA dc, IB = -50 mA dc
IC = -150 mA dc, IB = -15 mA dc
IC = -500 mA dc, IB = -50 mA dc
TA = +150oC
VCB = -50 V dc
TA = -55oC
VCE = -10 V dc: IC = -10 mA dc
2N2906A
2N2907A
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
V dc
V dc
ICBO3 µA dc
40
40
40
40
40
75
100
100
100
50
-0.6
175
120
450
300
-0.4
-1.6
-1.3
-2.6
-10
hFE6
-
20
50
(Continued next page)
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com

2N2907A
2N2906A, L, UA, UB
2N2907A, L, UA, UB
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Electrical Specifications ( TA = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Units Minimum Maximum
Dynamic Characteristics:
Small-Signal Short-Circuit
Forward Current Transfer Ratio
VCE = -10 V dc; IC = -1.0 mA dc; f = 1 kHz
2N2906A, L, UA, UB
2N2907A, L, UA, UB
Magnitude of Small-Signal Short-Circuit, VCE = -20 V dc; IC = -20 mA dc; f = 100
Forward Current Transfer Ratio
MHz
hfe
| hfe |
40 —
100
2.0 —
Open Circuit Output Capacitance VCB = -10 V dc; IE = 0, 100 kHz ≤ f ≤ 1 MHz Cobo
Input Capacitance (Output Open-
Circuited)
Switching Characteristics:
VEB = -2.0 V dc; IC = 0; 100 kHz ≤ f ≤ 1
MHz
Cibo
pF
pF
8
30
Saturated Turn-On Time
(See figure 16 of MIL-PRF-19500/291) ton ns
45
Saturated Turn-Off Time
(See Figure 17 of MIL-PRF-19500/291)
toff
ns
300
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
TJ, TSTG
Value
-60 V dc
-60 V dc
-5 V dc
-600 mA dc
-65°C to +200°C
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Features 2N2906A, L, UA, UB 2N2907A, L, UA, UB Ra diation Hardened PNP Silicon Switching Transistors Features • Qualified to M IL-PRF-19500/291 • Available in JAN, JANTX, JANTXV, JANS and JANSR • Rad H ard Levels M, D, P, L and R • TO-18, Surface Mount UA & UB Packages Applicat ions • Switching and Linear Applicati ons • DC and VHF Amplifier Applicatio ns Rev. V3 Electrical Specifications (TA = 25°C unless otherwise specified) Parameter Test Conditions Symbol Un its Minimum Maximum Collector - Emitte r Breakdown Collector - Base Cutoff Cur rent Emitter - Base Cutoff Current Coll ector - Emitter Cutoff Current IC = -1 0 mA dc VCB = -60 V dc VCB = -50 V dc V EB = -5.0 V dc VEB = -4.0 V dc VCE = -5 0 V dc V(BR)CEO V dc ICBO1 ICBO2 IEBO 1 IEBO2 µA dc nA dc µA dc nA dc ICE S nA dc -60 — — — — -10 -10 - 10 -50 -50 Forward Current Transfer Ra tio Collector - Base Cutoff Current Bas e - Emitter Saturation Voltage Collecto r - Base Cutoff Current Forward Current Transfer Ratio 1 2N2906A, L, UA, UB VCE = -10.
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