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MJE13070

Silicon NPN Power Transistors

Description

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071 · Collector-Emitter Saturation Voltage: VCE(sat) = 3.0V(Min)@IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed, power switchi...

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