MMBFJ112 Switch Datasheet

MMBFJ112 Datasheet PDF, Equivalent


Part Number

MMBFJ112

Description

N-Channel Switch

Manufacture

ON Semiconductor

Total Page 10 Pages
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MMBFJ112
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /
MMBFJ113
N-Channel Switch
Features
• This device is designed for low level analog switching,
sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process 51
• Source & Drain are interchangeable.
G
SD
TO-92
Figure 1. J111 / J112 / J113 Device Package
Ordering Information
Part Number
J111
J111-D26Z
J111-D74Z
J112
J112-D26Z
J112-D27Z
J112-D74Z
J113
J113-D74Z
J113-D75Z
MMBFJ111
MMBFJ112
MMBFJ113
Top Mark
J111
J111
J111
J112
J112
J112
J112
J113
J113
J113
6P
6R
6S
G
SOT-23
S
Note: Source & Drain
D are interchangeable
Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113
Device Package
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Bulk
Tape and Reel
Ammo
Bulk
Tape and Reel
Tape and Reel
Ammo
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Tape and Reel
© 1997 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
MMBFJ113/D

MMBFJ112
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG
VGS
IGF
TJ, TSTG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
35
-35
50
-55 to 150
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max.
Symbol
Parameter
J111 / J112 /
J113(3)
MMBFJ111 /
MMBFJ112 /
MMBFJ113(4)
Unit
Total Device Dissipation
PD Derate Above 25°C
625 350 mW
5.0 2.8 mW/°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
125 °C/W
200 357 °C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
www.onsemi.com
2


Features J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / M MBFJ113 N-Channel Switch Features • This device is designed for low level a nalog switching, sample and hold circui ts and chopper stabilized amplifiers. Sourced from process 51 • Source & Drain are interchangeable. G SD TO-9 2 Figure 1. J111 / J112 / J113 Device Package Ordering Information Part Numb er J111 J111-D26Z J111-D74Z J112 J112-D 26Z J112-D27Z J112-D74Z J113 J113-D74Z J113-D75Z MMBFJ111 MMBFJ112 MMBFJ113 T op Mark J111 J111 J111 J112 J112 J112 J 112 J113 J113 J113 6P 6R 6S G SOT-23 S Note: Source & Drain D are interchan geable Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113 Device Package Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO -92 3L SOT-23 3L SOT-23 3L SOT-23 3L P acking Method Bulk Tape and Reel Ammo B ulk Tape and Reel Tape and Reel Ammo Bu lk Ammo Ammo Tape and Reel Tape and Reel Tape and Reel © 1997 Semicond.
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