2N2905A Transistor Datasheet

2N2905A Datasheet PDF, Equivalent


Part Number

2N2905A

Description

Small Signal General Purpose Transistor

Manufacture

TAITRON

Total Page 4 Pages
Datasheet
Download 2N2905A Datasheet


2N2905A
Small Signal General
Purpose Transistor (PNP)
2N2904A/2N2905A
Small Signal General Purpose Transistor (PNP)
Features
Switching and Linear Application
DC to VHF Amplifier Application
RoHS Compliant
Mechanical Data
Case:
Terminals:
Weight:
TO-39, Metal can package
Solderable per MIL-STD-202, Method 208
0.35 grams
TO-39
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N2904A
2N2905A
VCBO
Collector-Base Voltage
60
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
60
5.0
IC Collector Current Continuous
Power Dissipation at TA=25°C
600
600
Power Dissipation Derate above TA=25°C
PD
Power Dissipation at TC=25°C
3.43
3.0
Power Dissipation Derate above TC=25°C
17.2
TJ, TSTG Operating Junction and Storage Temperature Range
-65 to +200
Unit
V
V
V
mA
mW
mW/° C
W
mW/° C
°C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766
Fax: (800)-TAITFAX (800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/AH
Page 1 of 4

2N2905A
Small Signal General Purpose Transistor (PNP)
2N2904A/2N2905A
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
VCBO
*VCEO
VEBO
Description
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
hFE D.C. Current Gain
2N2904A
2N2905A
*VCE(sat) Collector-Emitter Saturation Voltage
*VBE(sat) Base-Emitter Saturation Voltage
ICBO
ICEX
IB
**ft
Collector-Cut-off Current
Collector-Cut-off Current
Base Current
Transition Frequency
Min.
60
60
5.0
40
40
40
40
40
75
100
100
100
50
-
-
-
-
-
-
-
-
200
Cob Out-Put Capacitance
-
Cib In-Put Capacitance
-
td Delay Time
tr Rise Time
ton Turn-On Time
-
-
-
ts Storage Time
-
tf Fall Time
toff Turn-Off Time
-
-
*Pulse Test: -Pulse Width=300µs, Duty Cycle=2%
**ft is defined as the frequency at which \hfe/ extrapolates to unity
Max.
-
-
-
-
-
-
120
-
-
-
-
300
-
0.4
1.6
1.3
2.6
10
10
50
50
-
8.0
30
10
40
45
80
30
100
Unit
V
V
V
V
V
V
V
nA
μA
nA
nA
MHz
pF
pF
nS
nS
nS
nS
nS
nS
Conditions
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
*VCE=10V, IC=150mA
*VCE=10V, IC=500mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
*VCE=10V, IC=150mA
*VCE=10V, IC=500mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCB=50V, IE=0
VCB=50V, IE=0,
TA=150° C
VCE=30V, VBE=0.5V
VCE=30V, VBE=0.5V
IC=50mA, VCE=20V,
f=100MHz
VCB=10V, IE=0,
f=100KHz
VBE=2V, IC=0,
f=100KHz
IC=150mA, IB1=15mA
VCC=30V
IC=150mA,
IB1=IB2=15mA
VCC=6V
www.taitroncomponents.com
Rev. A/AH
Page 2 of 4


Features Small Signal General Purpose Transistor (PNP) 2N2904A/2N2905A Small Signal Gen eral Purpose Transistor (PNP) Features • Switching and Linear Application DC to VHF Amplifier Application • RoHS Compliant Mechanical Data Case: Termi nals: Weight: TO-39, Metal can package Solderable per MIL-STD-202, Method 208 0.35 grams TO-39 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N2904A 2N2905A VCBO Collector-Base Voltage 60 VCEO VEBO Collector-Emitter Voltage Emitter -Base Voltage 60 5.0 IC Collector Cur rent Continuous Power Dissipation at TA =25°C 600 600 Power Dissipation Dera te above TA=25°C PD Power Dissipation at TC=25°C 3.43 3.0 Power Dissipatio n Derate above TC=25°C 17.2 TJ, TSTG Operating Junction and Storage Tempera ture Range -65 to +200 Unit V V V mA mW mW/° C W mW/° C °C TAITRON COMPO NENTS INCORPORATED www.taitroncomponent s.com Tel: (800)-TAITRON (800)-824-876 6 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/.
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