SCT20N120
Datasheet
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ = 150 °C) in an HiP247 package
HiP247
3 2
1
D(2, TAB)
Features
Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance
Applications
Solar invert...
