FDMS86200DC MOSFET Datasheet

FDMS86200DC Datasheet, PDF, Equivalent


Part Number

FDMS86200DC

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 9 Pages
Datasheet
Download FDMS86200DC Datasheet


FDMS86200DC
FDMS86200DC
MOSFET - PowerTrench),
N-Channel, Dual CoolE56,
Shielded Gate
150 V, 40 A, 17 mW
General Description
This NChannel MOSFET is produced using ON Semiconductor’s
advanced PowerTrench® process that incorporates Shielded Gate
technology. Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on) while
maintaining excellent switching performance by extremely low
JunctiontoAmbient thermal resistance.
Features
Shielded Gate MOSFET Technology
Dual CoolTM Top Side Cooling PQFN Package
Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A
Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A
High Performance Technology for Extremely Low rDS(on)
100% UIL Tested
RoHS Compliant
Applications
Primary MOSFET in DC DC Converters
Secondary Synchronous Rectifier
Load Switch
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Drain Current:
Continuous, TC = 25°C
Continuous, TA = 25°C (Note 1a)
Pulsed (Note 4)
150
±20
40
9.3
100
V
V
A
EAS Single Pulse Avalanche Energy
(Note 3)
294 mJ
PD
TJ, TSTG
Power Dissipation:
TC = 25°C
TA = 25°C (Note 1a)
Operating and Storage Junction
Temperature Range
125
3.2
55 to +150
W
°C
www.onsemi.com
N-Channel MOSFET
Top View
Bottom View
DDDD
PIN1
SSSG
Dual CoolE 56
PQFN8
CASE483BK
PIN1
MARKING DIAGRAM
DD D D
$Y&Z&3&K
FDMS
86200DC
GS SS
(Top View)
$Y
&Z
&3
&K
FDMS86200DC
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
July, 2019 Rev. 3
1
Publication Order Number:
FDMS86200DC/D

FDMS86200DC
FDMS86200DC
Table 1. THERMAL CHARACTERISTICS
Characteristic
Symbol
RqJC
RqJC
RqJA
RqJA
RqJA
RqJA
RqJA
Thermal Resistance, Junction to Case (Top Source)
Thermal Resistance, Junction to Case (Bottom Drain)
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
Thermal Resistance, Junction to Ambient (Note 1i)
Thermal Resistance, Junction to Ambient (Note 1j)
Thermal Resistance, Junction to Ambient (Note 1k)
PACKAGE MARKING AND ORDERING INFORMATION
Device
Top Marking
Package
86200
FDMS86200DC
Dual Cool56
Value
2.5
1.0
38
81
16
23
11
Unit
°C/W
Reel Size
13
Tape Width
12 mm
Quantity
3000 Units
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
ID = 250 mA, VGS = 0 V
DBVDSS
/DTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, referenced to 25°C
IDSS Zero Gate Voltage Drain Current
IGSS Gate to Source Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VGS = VDS, ID = 250 mA
DVGS(th)
/DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 mA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
VGS = 10 V, ID = 9.3 A
VGS = 6 V, ID = 7.8 A
VGS = 10 V, ID = 9.3 A, TJ = 125 °C
VDS = 10 V, ID = 9.3 A
Vf =DS1=M7H5zV, VGS = 0 V,
VDD = 75 V, ID = 9.3 A, VGS = 10 V,
RGEN = 6 W
Min Typ Max Unit
150 V
105 mV/°C
1
±100
mA
nA
2.0 3.3 4.0
V
11 mV/°C
14 17
17 25 mW
29 35
32 S
2110 2955
pF
205 290
pF
8.1 15 pF
0.1 1.5 3.0
W
16 29 ns
4 10 ns
23 37 ns
5 10 ns
www.onsemi.com
2


Features FDMS86200DC MOSFET - PowerTrench), N-Ch annel, Dual CoolE56, Shielded Gate 150 V, 40 A, 17 mW General Description Thi s N−Channel MOSFET is produced using ON Semiconductor’s advanced PowerTren ch® process that incorporates Shielded Gate technology. Advancements in both silicon and Dual CoolTM package technol ogies have been combined to offer the l owest rDS(on) while maintaining excelle nt switching performance by extremely l ow Junction−to−Ambient thermal resi stance. Features • Shielded Gate MOSF ET Technology • Dual CoolTM Top Side Cooling PQFN Package • Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A • Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A • High Performance Technology for Extremely Low rDS(on) • 100% UIL Test ed • RoHS Compliant Applications • Primary MOSFET in DC − DC Converters • Secondary Synchronous Rectifier • Load Switch MOSFET MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Symb ol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain C.
Keywords FDMS86200DC, datasheet, pdf, ON Semiconductor, N-Channel, MOSFET, DMS86200DC, MS86200DC, S86200DC, FDMS86200D, FDMS86200, FDMS8620, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)