FCH190N65F MOSFET Datasheet

FCH190N65F Datasheet, PDF, Equivalent


Part Number

FCH190N65F

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 9 Pages
Datasheet
Download FCH190N65F Datasheet


FCH190N65F
FCH190N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 20.6 A, 190 mΩ
Features
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 168 mΩ
• Ultra Low Gate Charge (Typ. Qg = 60 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
Description
SuperFET® II MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET® MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
D
G DS
TO-247
long leads
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
S
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCH190N65F-F155
650
±20
±30
20.6
13.1
61.8
400
4.0
2.1
100
50
208
1.67
-55 to +150
300
FCH190N65F-F155
0.6
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2014 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FCH190N65F-F155/D

FCH190N65F
Package Marking and Ordering Information
Part Number
FCH190N65F-F155
Top Mark
FCH190N65F
Package Packing Method
TO-247 G03
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
ID = 10 mA, Referenced to 25oC
VDS = 650 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TC = 125 oC
VGS = ±20 V, VDS = 0 V
650
700
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 2 mA
VGS = 10 V, ID = 10 A
VDS = 20 V, ID = 10 A
3
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
VDS = 380 V, ID = 10 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
Typ.
-
-
0.72
-
60
-
-
168
18
2425
78
0.68
44
304
60
12
25
0.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 10 A,
VGS = 10 V, Rg = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 10 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 10 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 4 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 10 A, di/dt 200 A/μs, VDD 380 V, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
25
11
62
4.2
-
-
-
105
515
Quantity
30 units
Max. Unit
-
-
-
10
-
±100
V
V/oC
μA
nA
5V
190 mΩ
-S
3225
104
-
-
-
78
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
60 ns
32 ns
134 ns
18 ns
20.6 A
61.8 A
1.2 V
- ns
- nC
www.onsemi.com
2


Features FCH190N65F — N-Channel SuperFET® II F RFET® MOSFET FCH190N65F N-Channel Sup erFET® II FRFET® MOSFET 650 V, 20.6 A , 190 mΩ Features • 700 V @ TJ = 15 0°C • Typ. RDS(on) = 168 mΩ • Ult ra Low Gate Charge (Typ. Qg = 60 nC) Low Effective Output Capacitance (Typ . Coss(eff.) = 304 pF) • 100% Avalanc he Tested • RoHS Compliant Applicatio ns • LCD / LED / PDP TV • Telecom / Server Power Supplies • Solar Inve rter • AC - DC Power Supply Descrip tion SuperFET® II MOSFET is ON Semicon ductor’s brand-new high voltage super -junction (SJ) MOSFET family that is ut ilizing charge balance technology for o utstanding low on-resistance and lower gate charge performance. This technolog y is tailored to minimize conduction lo ss, provide superior switching performa nce, dv/dt rate and higher avalanche en ergy. Consequently, SuperFET II MOSFET is very suitable for the switching powe r applications such as PFC, server/tele com power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET.
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