2N6609 Transistor Datasheet

2N6609 Datasheet, PDF, Equivalent


Part Number

2N6609

Description

Silicon PNP Transistor

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download 2N6609 Datasheet


2N6609
2N6609
Silicon PNP Transistor
Audio Amplifier Output
TO3 Type Package
Description:
The 2N6609 is a silicon PNP power transistors in a TO3 type package designed for high power audio,
disk head positioners, and other linear applications. It can also be used in power switching circuits such
as relay or solenoid drivers, DC to DC converters or inverters.
Features:
D High Safe Operating Area 150W @ 100V
D Completely Characterized for Linear Operation
D High DC Current Gain and Low Saturation Voltage:
hFE = 15 (Min) @ 8A, 4V
VCE(sat) = 1.4V (Max) @ IC = 8A, IB = 0.8A
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
CollectorEmitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current,
Continuous
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16A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total
PDowerearteDiAsbsiopvaetio+n25(TCC
=
..
+25C),
.......
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. . . . 150W
0.855W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.

2N6609
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Condition
OFF Characteristics (Note 1)
CollectorEmitter Breakdown Voltage
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO
VCEX(sus)
VCER(sus)
ICEO
ICEX
ICBO
IEBO
IC = 0.2A, IB = 0
IRCB=E 0=.11A00, VBE(off) = 1.5V,
IC = 0.2A, RBE = 100
VCE = 120V, IB = 0
VCE = 140V, VBE(off) = 1.5V
VTCCE==+114500VC, VBE(off) = 1.5V,
VCB = 140V, IE = 0
VEB = 7V, IC = 0
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
VCE = 4V, IC = 8A
VCE = 4V, IC = 16A
IC = 8A, IB = 800mA
IC = 16A, IB = 3.2A
IC = 8A, VCE = 4V
Magnitude of CommonEmitter
SmallSignal, ShortCircuit,
Forward Current Transfer Ratio
|hfe| IC = 1A, f = 50kHz
SmallSignal Current Gain
Second Breakdown Characteristics
hfe
VCE = 4V, IC = 1A, f = 1kHz
Second Breakdown Collector Current
with Base Forward Biased
IS/b t = 1sec (nonrepetitive), VCE = 100V
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.
Min Typ Max Unit
140
160
150
−−
−−
−−
−−
−−
V
V
V
10 mA
2 mA
10 mA
2 mA
5 mA
15 60
5−−
− − 1.4 V
− − 4.0 V
− − 2.2 V
4−−
40
1.5 − − A


Features 2N6609 Silicon PNP Transistor Audio Ampl ifier Output TO−3 Type Package Descr iption: The 2N6609 is a silicon PNP pow er transistors in a TO−3 type package designed for high power audio, disk he ad positioners, and other linear applic ations. It can also be used in power sw itching circuits such as relay or solen oid drivers, DC to DC converters or inv erters. Features: D High Safe Operatin g Area 150W @ 100V D Completely Charact erized for Linear Operation D High DC C urrent Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4 V (Max) @ IC = 8A, IB = 0.8A Absolute Maximum Ratings: (TA = +25C unless o therwise specified) Collector−Emitte r Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector−Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . ..
Keywords 2N6609, datasheet, pdf, NTE, Silicon, PNP, Transistor, N6609, 6609, 609, 2N660, 2N66, 2N6, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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