S10H07M MOSFET Datasheet

S10H07M Datasheet, PDF, Equivalent


Part Number

S10H07M

Description

N-CHANNEL POWER MOSFET

Manufacture

SI-TECH

Total Page 7 Pages
Datasheet
Download S10H07M Datasheet


S10H07M
SI-TECH SEMICONDUCTOR CO.,LTD
S10H07M
N-Channel MOSFET
Features
100V,70A,Rds(on)(typ)=9.2m@Vgs=10V
High Ruggedness
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
General Description
This Power MOSFET is produced using Si-Tech’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics.These devices are well
suited for low voltage application such as automotive,DC/DC
converters,and high efficiency switch for power management
in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation (TC=25 )
Derating Factor above 25
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
Value
100
70
58
280
±25
270
131
0.87
-55 to +175
-55 to +175
Max.
1.14
63
Units
V
A
A
A
V
mJ
W
W/
Units
/W
/W
Ver.1.6
-1-
Apr.2019

S10H07M
SI-TECH SEMICONDUCTOR CO.,LTD
S10H07M
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Drain-Source On-State Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance -
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VDS=75V, VGS=0V
VGS=25V, VDS=0V
VGS=-25V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=40A
VDD=60V
VGS=10V
ID=60A
(Note 3)
VDD=37.5V,VGS=10V
ID=45A,RG=4.7
TC=25
(Note 3)
VDS=25V
VGS=0V
f = 1MHz
Min. Typ. Max. Units
100 -
-V
- - 1 uA
- - 100 nA
- - -100 nA
2.4 - 3.6 V
- 9.2 11 m
- 102 - nC
- 16 - nC
- 22 - nC
- 22 - ns
- 33 - ns
- 73 - ns
- 41 - ns
- 4865 -
pF
- 1471 -
pF
- 663 - pF
Source-Drain Diode Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
IS Continuous Source Diode Forward Current
ISM Pulsed Source Diode Forward Current (Note 1)
VSD Forward On Voltage
VGS=0V, IS=45A
tr r Reverse Recovery Time
Qr r Reverse Recovery Charge
VGS=0V, IS=45A
dIF/dt = 100A/us
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.5mH, VDD=50V, RG=25 Ω, Starting TJ=25
3. Pulse Width 300 us; Duty Cycle2%
Min. Typ. Max. Units
- - 70 A
- - 280 A
- - 1.3 V
- 44
ns
- 92
nC
Ver.1.6
-2-
Apr.2019


Features SI-TECH SEMICONDUCTOR CO.,LTD S10H07M N -Channel MOSFET Features █100V,70A,R ds(on)(typ)=9.2mΩ @Vgs=10V █ High R uggedness █ Fast Switching █ 100% A valanche Tested █ Improved dv/dt Capa bility General Description This Power M OSFET is produced using Si-Tech’s adv anced Trench MOS Technology. This lates t technology has been especially design ed to minimize on-state resistance, hav e a high rugged avalanche characteristi cs.These devices are well suited for lo w voltage application such as automotiv e,DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol Parameter VDSS ID ID M VGS EAS PD TJ TSTG Drain-Source Volt age Continuous Drain Current (TC=25 ℃ ) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Sour ce Voltage Single Pulsed Avalanche Ener gy (Note 2) Maximum Power Dissipation ( TC=25 ℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range Thermal Characteristi.
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