S60N10M MOSFET Datasheet

S60N10M Datasheet, PDF, Equivalent


Part Number

S60N10M

Description

N-CHANNEL POWER MOSFET

Manufacture

SI-TECH

Total Page 7 Pages
Datasheet
Download S60N10M Datasheet


S60N10M
SI-TECH SEMICONDUCTOR CO.,LTD
S60N10M
N-Channel MOSFET
Features
60V, 100A,Rds(on)(typ)=5m@Vgs=10V
High Ruggedness
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
General Description
This Power MOSFET is produced using Si-Tech’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics.These devices are well
suited for low voltage application such as automotive,DC/DC
converters,and high efficiency switch for power management
in portable and battery products.
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
PD
TJ
TSTG
Parameter
Drain-Source Voltage(TC=25 )
Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation (TC=25 )
Derating Factor above 25
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth c-s
Rth j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Value
60
100
71
400
±25
400
114
0.76
-55 to +175
-55 to +175
Max.
1.31
0.5
63
Units
V
A
A
A
V
mJ
W
W/
Units
/W
/W
/W
Ver1.6
-1-
May.2019

S60N10M
SI-TECH SEMICONDUCTOR CO.,LTD
S60N10M
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Drain-Source On-State Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance -
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VDS=55V, VGS=0V
VGS=25V, VDS=0V
VGS=-25V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=40A
VDD=60V
VGS=10V
ID=80A
(Note 3)
VDD=37.5V,VGS=10V
ID=45A,RG=4.7
TC=25
(Note 3)
VDS=25V
VGS=0V
f = 1MHz
Min. Typ. Max. Units
60 - - V
- - 1 uA
- - 100 nA
- - -100 nA
2.4 - 3.6 V
- 5 6 m
- 120 - nC
- 30 - nC
- 31 - nC
- 27 - ns
- 163 - ns
- 42 - ns
- 30 - ns
- 3500
pF
- 1900 -
pF
- 800 - pF
Source-Drain Diode Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
IS Continuous Source Diode Forward Current
ISM Pulsed Source Diode Forward Current (Note 1)
VSD Forward On Voltage
VGS=0V, IS=40A
tr r Reverse Recovery Time
Qr r Reverse Recovery Charge
VGS=0V, IS=40A
dIF/dt = 100A/us
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.5mH, IAS=40A, VDD=48V, RG=25 , Starting TJ=25
3. Pulse Width 300 us; Duty Cycle2%
Min. Typ. Max. Units
- - 100 A
- - 400 A
- - 1.3 V
- 100 150 ns
- 410 650 nC
Ver1.6
-2-
May.2019


Features SI-TECH SEMICONDUCTOR CO.,LTD S60N10M N -Channel MOSFET Features  60V, 100A ,Rds(on)(typ)=5mΩ @Vgs=10V  High R uggedness  Fast Switching  100% A valanche Tested  Improved dv/dt Capa bility General Description This Power M OSFET is produced using Si-Tech’s adv anced Trench MOS Technology. This lates t technology has been especially design ed to minimize on-state resistance, hav e a high rugged avalanche characteristi cs.These devices are well suited for lo w voltage application such as automotiv e,DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS PD TJ TSTG Parameter Drain-Source Voltag e(TC=25 ℃) Continuous Drain Current ( TC=25 ℃) Continuous Drain Current (TC =100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avala nche Energy (Note 2) Maximum Power Diss ipation (TC=25 ℃) Derating Factor abo ve 25℃ Operating Junction Temperature Range Storage Temperature Range Thermal Charac.
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