N-Channel MOSFET. FDS6930B Datasheet

FDS6930B MOSFET. Datasheet pdf. Equivalent

FDS6930B Datasheet
Recommendation FDS6930B Datasheet
Part FDS6930B
Description Dual N-Channel MOSFET
Feature FDS6930B; SMD Type Dual N-Channel MOSFET FDS6930B (KDS6930B) MOSFET ■ Features ● VDS (V) = 30V ● ID = 5.5 A.
Manufacture Kexin
Datasheet
Download FDS6930B Datasheet




Kexin FDS6930B
SMD Type
Dual N-Channel MOSFET
FDS6930B (KDS6930B)
MOSFET
Features
VDS (V) = 30V
ID = 5.5 A (VGS = 10V)
RDS(ON) 38mΩ (VGS = 10V)
RDS(ON) 50mΩ (VGS = 4.5V)
Fast switching speed
High power and current handling capability
SOP-8
Unit:mm
1.50 0.15
1 S2
2 G2
3 S1
4 G1
5 D1
6 D1
7 D2
8 D2
54
63
72
81
Absolute Maximum Ratings Ta = 25
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Symbol
VDS
VGS
ID
IDM
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
(Note.1)
(Note.2)
(Note.3)
(Note.1)
PD
RthJA
RthJC
TJ
Tstg
Note.1: 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper
Note.2: 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper
Note.3: 135°C/W when mounted on a minimum pad.
Rating
30
±20
5.5
20
2
1.6
1
0.9
78
40
150
-55 to 150
Unit
V
A
W
/W
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Kexin FDS6930B
SMD Type
MOSFET
Dual N-Channel MOSFET
FDS6930B (KDS6930B)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=24V, VGS=0V
VDS=24V, VGS=0V, TJ=55
VDS=0V, VGS=±20V
VDS=VGS , ID=250uA
VGS=10V, ID=5.5A
VGS=10V, ID=5.5A TJ=125
VGS=4.5V, ID=4.8A
VGS=10V, VDS=5V
VDS=5V, ID=5.5A
VGS=0V, VDS=15V, f=1MHz
VGS=15V, VDS=0V, f=1MHz
VGS=5V, VDS=15V, ID=5.5A
VGS=10V, VDS=15V, ID=1A
RGEN=6Ω
IF= 5.5A, dI/dt= 100A/μs
IS=1A,VGS=0V
Note. Pulse Test: Pulse Width < 300 μs,Duty Cycle < 2.0%
Min Typ Max Unit
30 V
1
uA
10
±100 nA
1 3V
38
62 mΩ
50
20 A
19 S
310 412
90 120 pF
40 60
1.9 Ω
2.7 3.8
1 nC
0.7
6 12
6 12
16 28 ns
24
16 32
6 nC
1.3 A
1V
Marking
Marking
6930B
KA****
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Kexin FDS6930B
SMD Type
MOSFET
Dual N-Channel MOSFET
FDS6930B (KDS6930B)
Typical Characterisitics
20
VGS = 10V
4.0V
16
6.0V
12
4.5V
3.5V
8
3.0V
4
0
0 0.5 1 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
2
1.8
VGS = 3.5V
1.6
1.4 4.0V
1.2
1
4.5V
5.0V
6.0V
10.0V
0.8
0
4 8 12 16
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
20
1.6
ID = 5.5A
VGS = 10.0V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 5V
16
12
8
TA = 125° C
-55°C
4
25°C
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0.12
0.1
ID = 2.75A
0.08
0.06
TA = 125°C
0.04
TA = 25°C
0.02
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
100
VGS = 0V
10
1
0.1
0.01
TA = 125°C
25°C
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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