MTB050N15BRH8 Power MOSFET Datasheet

MTB050N15BRH8 Datasheet, PDF, Equivalent


Part Number

MTB050N15BRH8

Description

N-Channel Power MOSFET

Manufacture

CYStech

Total Page 10 Pages
Datasheet
Download MTB050N15BRH8 Datasheet


MTB050N15BRH8
CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2018.03.09
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTB050N15BRH8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(TYP)
VGS=10V, ID=3.4A
VGS=4.5V, ID=3.3A
150V
16A
4.2A
45mΩ
50mΩ
Symbol
MTB050N15BRH8
GGate DDrain SSource
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB050N15BRH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB050N15BRH8
CYStek Product Specification

MTB050N15BRH8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Continuous Drain Current @ TA=85°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=16A, VDD=50V
Repetitive Avalanche Energy @ L=0.05mH
TC=25
TC=100
Total Power Dissipation
TA=25°C
TA=70°C
TA=85°C
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C033H8
Issued Date : 2018.03.09
Revised Date :
Page No. : 2/10
10s Steady State
150
±20
16
10
6.4 4.2
5.1 3.4
4.6 3.0
64 *1
36
128
5 *2
36
14.4
5.7 2.5
4.0 1.8
3.6 1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient
(Note 2)
Thermal Resistance, Junction-to-case
t10s
Steady State
Symbol
RθJA
RθJC
Typical
18
42
3.0
Maximum
22
50
3.5
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4.100% tested by conditions of L=0.1mH, IAS=4.5A, VGS=10V, VDD=25V
MTB050N15BRH8
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 033H8 Issued Date : 2018.03.09 Revised Date : Page No. : 1/10 N-Channel Enhan cement Mode Power MOSFET MTB050N15BRH8 Features • Single Drive Requirement • Low On-resistance • Fast Switchin g Characteristic • Pb-free lead plati ng and Halogen-free package BVDSS ID@ VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=3.4A VGS=4.5V , ID=3.3A 150V 16A 4.2A 45mΩ 50mΩ S ymbol MTB050N15BRH8 G:Gate D:Drain S:Source Outline Pin 1 S S S G DFN5 ×6 D D D D G S S S D D D D Pin 1 O rdering Information Device MTB050N15BRH 8-0-T6-G Package DFN 5 ×6 (Pb-free le ad plating and halogen-free package) S hipping 3000 pcs / tape & reel Environ ment friendly grade : S for RoHS compli ant products, G for RoHS compliant and green compound products Packing spec, T 6 : 3000 pcs / tape & reel,13” reel P roduct rank, zero for no rank products Product name MTB050N15BRH8 CYStek Pr oduct Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) P.
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