N-Channel MOSFET. AOTF292L Datasheet

AOTF292L MOSFET. Datasheet pdf. Equivalent

AOTF292L Datasheet
Recommendation AOTF292L Datasheet
Part AOTF292L
Description N-Channel MOSFET
Feature AOTF292L; AOT292L/AOB292L/AOTF292L 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM t.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOTF292L Datasheet




Alpha & Omega Semiconductors AOTF292L
AOT292L/AOB292L/AOTF292L
100V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• RoHS and Halogen Free Compliant
Applications
• Synchronous Rectification for power supply
• Ideal for boost converters
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D
100V
105A
< 4.5mΩ
< 5.3mΩ
(< 4.1mW*)
(< 4.9mW*)
D
G
AOT292L
DS
G
AOTF292L
G DS
S
AOB292L G
S
Orderable Part Number
AOT292L
AOTF292L
AOB292L
Package Type
TO-220
TO-220F
TO-263
Form
Tube
Tube
Tape & Reel
Minimum Order Quantity
1000
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT(B)292L
AOTF292L
Drain-Source Voltage
VDS
100
Gate-Source Voltage
Continuous Drain TC=25°C
Current G**
TC=100°C
Pulsed Drain Current C
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
VDS Spike I
10μs
TC=25°C
Power Dissipation B TC=100°C
VGS
ID
IDM
IDSM
IAS
EAS
VSPIKE
PD
±20
105
70
82
50
420
14.5
11.5
60
180
120
300
47
150
23
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
AOT(B)292L
AOTF292L
15
60
0.5
3.2
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
** Package limited for TO220 & TO263
Rev.3.0: August 2020
www.aosmd.com
Page 1 of 7



Alpha & Omega Semiconductors AOTF292L
AOT292L/AOB292L/AOTF292L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
ID=250μA, VGS=0V
VDS=100V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS, ID=250mA
VGS=10V, ID=20A
100
TJ=55°C
2.3
TO220/TO220F
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=6V, ID=20A
TO220/TO220F
VGS=10V, ID=20A
TO263
VGS=6V, ID=20A
TO263
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current(TO220/TO263) G
Maximum Body-Diode Continuous Current(TO220F)
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=50V, f=1MHz
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
f=1MHz
0.4
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=2.5W,
RGEN=3W
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms
Qrr
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms
Typ
2.8
3.7
6.1
4.2
3.3
3.8
90
0.68
6775
557
32
0.8
90
40
24
13.5
20
11.5
48
10
50
380
Max Units
V
1
μA
5
±100 nA
3.4
V
4.5
mΩ
7.4
5.3
4.1
4.9
S
1
V
105
A
50
A
pF
pF
pF
1.2
Ω
126 nC
60
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. L=100uH, Fsw=1Hz, Tj≤150C by repetitive UIS.
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale
Rev.3.0: August 2020
www.aosmd.com
Page 2 of 7



Alpha & Omega Semiconductors AOTF292L
AOT292L/AOB292L/AOTF292L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V 6V
80
4.5V
100
VDS=5V
80
60
60
40
4V
20
VGS=3.5V
0
0
1
2
3
4
5
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
8
6
VGS=6V
4
VGS=10V
2
0
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
12
ID=20A
10
8
125°C
6
4
25°C
2
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
40
25°C
125°C
20
0
0
1
2
3
4
5
6
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
2.2
2
1.8
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=6V
ID=20A
1
0.8
0
25 50 75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Rev.3.0: August 2020
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Page 3 of 7







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