P-Channel MOSFET. AO3493 Datasheet

AO3493 MOSFET. Datasheet pdf. Equivalent

Part AO3493
Description P-Channel MOSFET
Feature General Description • Low RDS(ON) • RoHS and Halogen-Free Compliant Applications • Load switch • PWM.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO3493 Datasheet



AO3493
General Description
• Low RDS(ON)
• RoHS and Halogen-Free Compliant
Applications
• Load switch
• PWM
AO3493
20V P-Channel MOSFET
Features
VDS = -20V
ID = -3A
RDS(ON) < 80m
RDS(ON) < 100m
RDS(ON) < 130m
(VGS = -4.5V)
(VGS =- 4.5V)-15
(VGS = -2.5V)
(VGS = -1.8V)
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±8
-3
-2.4
-15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev.2.0: June 2016
www.aosmd.com
Page 1 of 5



AO3493
AO3493
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Conditions
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3A
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.6A
VGS=-1.8V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-3A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
Min
-20
-0.4
-15
Typ
-0.65
56
80
70
85
12
-0.7
Max
-1
-5
±100
-1
80
115
100
130
-1
-1.4
Units
V
µA
nA
V
A
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
500
70
50
10 20 30
pF
pF
pF
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-3A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=3.3,
RGEN=6
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
8.5 20 nC
1.2 nC
2.1 nC
7.2 ns
36 ns
53 ns
56 ns
37 ns
27 nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
12
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: June 2016
www.aosmd.com
Page 2 of 5





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