N-Channel MOSFET. P1260ETFS Datasheet

P1260ETFS MOSFET. Datasheet pdf. Equivalent

Part P1260ETFS
Description N-Channel MOSFET
Feature P1260ETF / P1260ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 67.
Manufacture UNIKC
Datasheet
Download P1260ETFS Datasheet



P1260ETFS
P1260ETF / P1260ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
670mΩ @VGS = 10V
ID
12A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
12
7.6
48
7.3
264
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
48
19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.6
62.5
UNITS
°C / W
REV 1.0 1 2017/2/6



P1260ETFS
P1260ETF / P1260ETFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
600
2 2.8 4
±100
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
IDSS
RDS(ON)
VDS = 600V, VGS = 0V, TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 6A
1
10
518 670
Forward Transconductance1
gfs
VDS = 10V, ID = 6A
15
DYNAMIC
Input Capacitance
Ciss
2023
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
172
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD =480V, VGS = 10V, ID = 12A
VDD = 300V, ID = 12A,
RG= 25Ω
9
44
9
14
41
54
169
93
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 12A, VGS = 0V
12
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 12A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 380 msec, Duty Cycle 2.
449
6
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNITS
V
nA
mA
S
pF
nC
nS
A
V
nS
uC
REV 1.0 2 2017/2/6





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