wideband amplifier. BGA2867 Datasheet

BGA2867 amplifier. Datasheet pdf. Equivalent

Part BGA2867
Description MMIC wideband amplifier
Feature BGA2867 MMIC wideband amplifier Rev. 5 — 3 October 2016 Product data sheet 1. Product profile 1.1.
Manufacture NXP
Total Page 13 Pages
Datasheet
Download BGA2867 Datasheet



BGA2867
BGA2867
MMIC wideband amplifier
Rev. 5 — 3 October 2016
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50
A gain of 26.4 dB at 2150 MHz
Output power at 1 dB gain compression = 8 dBm
Supply current = 21.7 mA at a supply voltage of 5.0 V
Reverse isolation > 37 dB up to 2150 MHz
Good linearity with low second order and third order products
Noise figure = 3.6 dB at 950 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
Table 1.
Pin
1
2, 5
3
4
6
Pinning
Description
VCC
GND2
RF_OUT
GND1
RF_IN
Simplified outline Graphic symbol
654
1
63
123
4 2, 5
sym052



BGA2867
NXP Semiconductors
BGA2867
MMIC wideband amplifier
3. Ordering information
Table 2. Ordering information
Type number Package
Name
Description
BGA2867
-
plastic surface-mounted package; 6 leads
Version
SOT363
4. Marking
Table 3. Marking
Type number
BGA2867
Marking code
LP*
Description
* = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCC
ICC
Ptot
Tstg
Tj
Pdrive
supply voltage
supply current
total power dissipation
storage temperature
junction temperature
drive power
RF input AC coupled
Tsp = 90 C
6. Thermal characteristics
Min Max Unit
0.5 +7.0 V
- 36 mA
- 200 mW
40 +125 C
- 125 C
- +10 dBm
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to Ptot = 200 mW; Tsp = 90 C
solder point
Typ Unit
300 K/W
7. Characteristics
Table 6. Characteristics
VCC = 5 V; ZS = ZL = 50 ; Pi = 34 dBm; Tamb = 25 C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
VCC supply voltage
ICC supply current
4.5 5.0 5.5
20.1 21.7 23.2
Unit
V
mA
BGA2867
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 October 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
2 of 13





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)