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wideband amplifier. BGA2867 Datasheet

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wideband amplifier. BGA2867 Datasheet






BGA2867 amplifier. Datasheet pdf. Equivalent




BGA2867 amplifier. Datasheet pdf. Equivalent





Part

BGA2867

Description

MMIC wideband amplifier



Feature


BGA2867 MMIC wideband amplifier Rev. 5 ⠀” 3 October 2016 Product data sheet 1. Product profile 1.1 General descrip tion Silicon Monolithic Microwave Integ rated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6- pin SOT363 plastic SMD package. 1.2 Fe atures and benefits  Internally matc hed to 50   A gain of 26.4 dB at 2150 MHz  Output power at.
Manufacture

NXP

Datasheet
Download BGA2867 Datasheet


NXP BGA2867

BGA2867; 1 dB gain compression = 8 dBm  Suppl y current = 21.7 mA at a supply voltage of 5.0 V  Reverse isolation > 37 dB up to 2150 MHz  Good linearity with low second order and third order produ cts  Noise figure = 3.6 dB at 950 MH z  Unconditionally stable (K > 1) ï ® No output inductor required 1.3 Appl ications  LNB IF amplifiers  Gene ral purpose low noise wideband amp.


NXP BGA2867

lifier for frequencies between DC and 2. 2 GHz 2. Pinning information Table 1. Pin 1 2, 5 3 4 6 Pinning Description VCC GND2 RF_OUT GND1 RF_IN Simplified outline Graphic symbol 654 1 63 123 4 2, 5 sym052 NXP Semiconductors BGA 2867 MMIC wideband amplifier 3. Orderi ng information Table 2. Ordering infor mation Type number Package Name Desc ription BGA2867 .


NXP BGA2867

- plastic surface-mounted package; 6 le ads Version SOT363 4. Marking Table 3. Marking Type number BGA2867 Marking code LP* Description * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Mala ysia 5. Limiting values Table 4. Limi ting values In accordance with the Abso lute Maximum Rating System (IEC 60134). Symbol Parameter.

Part

BGA2867

Description

MMIC wideband amplifier



Feature


BGA2867 MMIC wideband amplifier Rev. 5 ⠀” 3 October 2016 Product data sheet 1. Product profile 1.1 General descrip tion Silicon Monolithic Microwave Integ rated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6- pin SOT363 plastic SMD package. 1.2 Fe atures and benefits  Internally matc hed to 50   A gain of 26.4 dB at 2150 MHz  Output power at.
Manufacture

NXP

Datasheet
Download BGA2867 Datasheet




 BGA2867
BGA2867
MMIC wideband amplifier
Rev. 5 — 3 October 2016
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
 Internally matched to 50 
 A gain of 26.4 dB at 2150 MHz
 Output power at 1 dB gain compression = 8 dBm
 Supply current = 21.7 mA at a supply voltage of 5.0 V
 Reverse isolation > 37 dB up to 2150 MHz
 Good linearity with low second order and third order products
 Noise figure = 3.6 dB at 950 MHz
 Unconditionally stable (K > 1)
 No output inductor required
1.3 Applications
 LNB IF amplifiers
 General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
Table 1.
Pin
1
2, 5
3
4
6
Pinning
Description
VCC
GND2
RF_OUT
GND1
RF_IN
Simplified outline Graphic symbol
654
1
63
123
4 2, 5
sym052




 BGA2867
NXP Semiconductors
BGA2867
MMIC wideband amplifier
3. Ordering information
Table 2. Ordering information
Type number Package
Name
Description
BGA2867
-
plastic surface-mounted package; 6 leads
Version
SOT363
4. Marking
Table 3. Marking
Type number
BGA2867
Marking code
LP*
Description
* = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCC
ICC
Ptot
Tstg
Tj
Pdrive
supply voltage
supply current
total power dissipation
storage temperature
junction temperature
drive power
RF input AC coupled
Tsp = 90 C
6. Thermal characteristics
Min Max Unit
0.5 +7.0 V
- 36 mA
- 200 mW
40 +125 C
- 125 C
- +10 dBm
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to Ptot = 200 mW; Tsp = 90 C
solder point
Typ Unit
300 K/W
7. Characteristics
Table 6. Characteristics
VCC = 5 V; ZS = ZL = 50 ; Pi = 34 dBm; Tamb = 25 C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
VCC supply voltage
ICC supply current
4.5 5.0 5.5
20.1 21.7 23.2
Unit
V
mA
BGA2867
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 October 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
2 of 13




 BGA2867
NXP Semiconductors
BGA2867
MMIC wideband amplifier
Table 6. Characteristics …continued
VCC = 5 V; ZS = ZL = 50 ; Pi = 34 dBm; Tamb = 25 C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Gp power gain
f = 250 MHz
f = 950 MHz
25.8 26.3 26.9
26.4 27.1 27.8
f = 2150 MHz
24.9 26.4 27.9
RLin input return loss
f = 250 MHz
f = 950 MHz
19 21 23
18 20 22
f = 2150 MHz
19 25 31
RLout output return loss
f = 250 MHz
f = 950 MHz
13 17 21
17 18 19
f = 2150 MHz
12 14 17
ISL isolation
f = 250 MHz
44 64 84
f = 950 MHz
44 46 48
f = 2150 MHz
34 37 39
NF noise figure
f = 250 MHz
3.2 3.7 4.2
f = 950 MHz
3.2 3.6 4.1
f = 2150 MHz
3.3 3.8 4.2
B3dB
K
3 dB bandwidth
Rollett stability factor
3 dB below gain at 1 GHz
f = 250 MHz
2.8 3
29 36
3.2
38
f = 950 MHz
3.5 4.5 4.5
f = 2150 MHz
1 1.8 2.8
PL(sat) saturated output power
f = 250 MHz
f = 950 MHz
899
7 8 10
f = 2150 MHz
567
PL(1dB) output power at 1 dB gain compression f = 250 MHz
f = 950 MHz
678
578
f = 2150 MHz
456
IP3I
IP3O
PL(2H)
IM2
input third-order intercept point
output third-order intercept point
second harmonic output power
second-order intermodulation distance
Pdrive = 40 dBm (for each tone)
f1 = 250 MHz; f2 = 251 MHz
f1 = 950 MHz; f2 = 951 MHz
f1 = 2150 MHz; f2 = 2151 MHz
Pdrive = 40 dBm (for each tone)
f1 = 250 MHz; f2 = 251 MHz
f1 = 950 MHz; f2 = 951 MHz
f1 = 2150 MHz; f2 = 2151 MHz
Pdrive = 37 dBm
f1H = 250 MHz; f2H = 500 MHz
f1H = 950 MHz; f2H = 1900 MHz
Pdrive = 40 dBm (for each tone)
f1 = 250 MHz; f2 = 251 MHz
f1 = 950 MHz; f2 = 951 MHz
7 5 3
11 8 6
16 13 10
19 21 23
17.5 19.5 21.5
11 14 17
63 61 59
- 50 -
49 51 53
- 51 -
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBc
dBc
BGA2867
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 October 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
3 of 13



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