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2N3019S Datasheet, Equivalent, Power Transistor.Low Power Transistor Low Power Transistor |
| Part | 2N3019S |
|---|---|
| Description | Low Power Transistor |
| Feature | 2N3019, 2N3019S, 2N3700
Low Power Transistors
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 80 Collector −Base Voltage VCBO 140 Emitter −Base Voltage VEBO 7.0 Collector Current − Continuous IC 1.0 Total Device Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700 PT 800 500 Unit Vdc Vdc Vdc Adc mW Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S 2N3700 PT W 5.0 1.0 Operating and Storage Junction Temperature Range TJ, Tstg . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | 2N3019S |
|---|---|
| Description | Low Power Transistor |
| Feature | 2N3019, 2N3019S, 2N3700
Low Power Transistors
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 80 Collector −Base Voltage VCBO 140 Emitter −Base Voltage VEBO 7.0 Collector Current − Continuous IC 1.0 Total Device Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700 PT 800 500 Unit Vdc Vdc Vdc Adc mW Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S 2N3700 PT W 5.0 1.0 Operating and Storage Junction Temperature Range TJ, Tstg . |
| Manufacture | ON Semiconductor |
| Datasheet |
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