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Power Transistor. 2N3019S Datasheet

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Power Transistor. 2N3019S Datasheet






2N3019S Transistor. Datasheet pdf. Equivalent




2N3019S Transistor. Datasheet pdf. Equivalent





Part

2N3019S

Description

Low Power Transistor



Feature


2N3019, 2N3019S, 2N3700 Low Power Transi stors NPN Silicon Features • MIL−PR F−19500/391 Qualified • Available a s JAN, JANTX, and JANTXV MAXIMUM RATIN GS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collecto r −Emitter Voltage VCEO 80 Collect or −Base Voltage VCBO 140 Emitter −Base Voltage VEBO 7.0 Collector C urrent − Continuous IC 1.0 Tota.
Manufacture

ON Semiconductor

Datasheet
Download 2N3019S Datasheet


ON Semiconductor 2N3019S

2N3019S; l Device Dissipation @ TA = 25°C 2N3019 , 2N3019S 2N3700 PT 800 500 Unit Vdc Vdc Vdc Adc mW Total Device Dissipati on @ TC = 25°C 2N3019, 2N3019S 2N3700 PT W 5.0 1.0 Operating and Storage J unction Temperature Range TJ, Tstg 65 to +200 °C THERMAL CHARACTERISTI CS Characteristic Symbol Max Unit T hermal Resistance, Junction to Ambient 2N3019, 2N3019S 2N3700 .


ON Semiconductor 2N3019S

RqJA °C/W 195 325 Thermal Resistance , Junction to Case 2N3019, 2N3019S 2N37 00 RqJC °C/W 30 150 Stresses exceed ing Maximum Ratings may damage the devi ce. Maximum Ratings are stress ratings only. Functional operation above the Re commended Operating Conditions is not i mplied. Extended exposure to stresses a bove the Recommended Operating Conditio ns may affect device.


ON Semiconductor 2N3019S

reliability. http://onsemi.com COLLECT OR 3 2 BASE 1 EMITTER TO−5 CASE 205A A STYLE 1 2N3019 TO−39 CASE 205AB ST YLE 1 2N3019S TO−18 CASE 206AA STYLE 1 2N3700 ORDERING INFORMATION Device Package Shipping JAN2N3019 JANTX2N 3019 TO−5 Bulk JANTXV2N3019 JAN2N 3019S JANTX2N3019S TO−39 Bulk JAN TXV2N3019S JAN2N3700 JANTX2N3700 TO 18 Bulk JANTXV2N3700 © Sem.

Part

2N3019S

Description

Low Power Transistor



Feature


2N3019, 2N3019S, 2N3700 Low Power Transi stors NPN Silicon Features • MIL−PR F−19500/391 Qualified • Available a s JAN, JANTX, and JANTXV MAXIMUM RATIN GS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collecto r −Emitter Voltage VCEO 80 Collect or −Base Voltage VCBO 140 Emitter −Base Voltage VEBO 7.0 Collector C urrent − Continuous IC 1.0 Tota.
Manufacture

ON Semiconductor

Datasheet
Download 2N3019S Datasheet




 2N3019S
2N3019, 2N3019S, 2N3700
Low Power Transistors
NPN Silicon
Features
MILPRF19500/391 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector Emitter Voltage
VCEO
80
Collector Base Voltage
VCBO
140
Emitter Base Voltage
VEBO
7.0
Collector Current Continuous
IC 1.0
Total Device Dissipation @ TA = 25°C
2N3019, 2N3019S
2N3700
PT
800
500
Unit
Vdc
Vdc
Vdc
Adc
mW
Total Device Dissipation @ TC = 25°C
2N3019, 2N3019S
2N3700
PT
W
5.0
1.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
2N3019, 2N3019S
2N3700
RqJA
°C/W
195
325
Thermal Resistance, Junction to Case
2N3019, 2N3019S
2N3700
RqJC
°C/W
30
150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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COLLECTOR
3
2
BASE
1
EMITTER
TO5
CASE 205AA
STYLE 1
2N3019
TO39
CASE 205AB
STYLE 1
2N3019S
TO18
CASE 206AA
STYLE 1
2N3700
ORDERING INFORMATION
Device
Package
Shipping
JAN2N3019
JANTX2N3019
TO5
Bulk
JANTXV2N3019
JAN2N3019S
JANTX2N3019S
TO39
Bulk
JANTXV2N3019S
JAN2N3700
JANTX2N3700
TO18
Bulk
JANTXV2N3700
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 2
1
Publication Order Number:
2N3019/D




 2N3019S
2N3019, 2N3019S, 2N3700
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 30 mAdc)
EmitterBase Cutoff Current
(VEB = 5.0 Vdc)
(VEB = 7.0 Vdc)
CollectorEmitter Cutoff Current
(VCE = 90 Vdc)
CollectorBase Cutoff Current
(VCB = 140 Vdc)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
Collector Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
SMALLSIGNAL CHARACTERISTICS
Magnitude of SmallSignal Current Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 5 Vdc, f = 1 kHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz)
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, Rg = 1 kW, PBW = 200 Hz)
CollectorBase Time Constant
(VCB = 10 Vdc, IC = 10 mAdc, f = 79.8 MHz)
SWITCHING CHARACTERISTICS
Pulse Response
(Reference Figure in MILPRF19500/391)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
Min Max
Unit
V(BR)CEO
IEBO
ICEO
ICBO
80
Vdc
10 nAdc
10 mAdc
10 nAdc
10 mAdc
hFE
VCE(sat)
VBE(sat)
50 300
90
100 300
50 300
15
0.2
0.5
1.1
Vdc
Vdc
|hfe|
hfe
Cobo
Cibo
NF
r’b,CC
5.0 20
80 400
12
60
4.0
400
pF
pF
dB
ps
ton + toff
ns
30
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2




 2N3019S
2N3019, 2N3019S, 2N3700
PACKAGE DIMENSIONS
DETAIL X
U
RF
NOTE 5
B
A
B
PC
L
A
SEATING
PLANE
K
3X D NOTES 4 & 6
0.007 (0.18MM) A B S C M
TO5 3Lead
CASE 205AA
ISSUE B
U
E
T
NOTE 7
DETAIL X
H
M
C
N
J
2
13
LEAD IDENTIFICATION
DETAIL
DETAIL X
U
RF
NOTE 5
B
A
B
PC
L
A
SEATING
PLANE
K
3X D NOTES 4 & 6
0.007 (0.18MM) A B S C M
TO39 3Lead
CASE 205AB
ISSUE A
U
E
T
NOTE 7
DETAIL X
H
M
C
N
J
2
13
LEAD IDENTIFICATION
DETAIL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 8.89 9.40 0.350 0.370
B 8.00 8.51 0.315 0.335
C 6.10 6.60 0.240 0.260
D 0.41 0.53 0.016 0.021
E 0.23 3.18 0.009 0.125
F 0.41 0.48 0.016 0.019
H 0.71 0.86 0.028 0.034
J 0.73 1.02 0.029 0.040
K 38.10 44.45 1.500 1.750
L 6.35 --- 0.250 ---
M 45_BSC
45_BSC
N 5.08 BSC
0.200 BSC
P --- 1.27 --- 0.050
R 1.37 BSC
0.054 BSC
T --- 0.76 --- 0.030
U 2.54 --- 0.100 ---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 8.89 9.40 0.350 0.370
B 8.00 8.51 0.315 0.335
C 6.10 6.60 0.240 0.260
D 0.41 0.48 0.016 0.019
E 0.23 3.18 0.009 0.125
F 0.41 0.48 0.016 0.019
H 0.71 0.86 0.028 0.034
J 0.73 1.02 0.029 0.040
K 12.70 14.73 0.500 0.580
L 6.35 --- 0.250 ---
M 45_BSC
N 5.08 BSC
45_BSC
0.200 BSC
P --- 1.27 --- 0.050
R 1.37 BSC
0.054 BSC
T --- 0.76 --- 0.030
U 2.54 --- 0.100 ---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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3



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