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2N3010

Motorola
Part Number 2N3010
Manufacturer Motorola
Description NPN silicon low-power transistor
Published Nov 6, 2018
Detailed Description 2N3010 (SILICON) CASE 22 (TO-18) NPN silicon low-power transistor primarily designed for high-speed, saturated switchi...
Datasheet PDF File 2N3010 PDF File

2N3010
2N3010

Overview
2N3010 (SILICON) CASE 22 (TO-18) NPN silicon low-power transistor primarily designed for high-speed, saturated switching applications.
Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage* VCEO* Collector-Emitter Voltage VCES Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current - Continuous IC Total Device Dissipation @TA = 25°C Derate above 25° C Operating and Storage Junction Temperature Range PD TJ , Tstg * Applicable from 0.
01 mAdc to 10 mAdc (Pulsed).
Value 6.
0 11 15 4_0 50 0.
30 1.
71 -65 to +200 Unit Vdc Vdc Vdc Vdc mAdc Watt mW/oC °c FIGURE 1 - TURN-ON AND TURN·OFF TIME TEST CIRCUIT Vee = +1.
0 V TO OSCILLOSCOPE RISE TIME = 0.
4 ns 50 INPUT Z 0 50n ~Vout 0.
1 /.
iF taff VBB =+5.
0V V.
m = -4.
0 V RISE TIME < 1.
0 ns OUTPUT Z = 50n PULSE WIDTH = 200 ns FIGURE 2 - CHARGE·STORAGE TIME TEST CIRCUIT RTSE TIME < 1.
0 ns OUTPUT Z = 50n PULSE WIDTH"" 200 ns +5.
2 V +3.
0 v 50 ~ O.
I MF TO OSCILLOSCOPE RISE TIME = O.
4 ns I...


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