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2N3011

Central Semiconductor
Part Number 2N3011
Manufacturer Central Semiconductor
Description SILICON NPN TRANSISTOR
Published Nov 5, 2017
Detailed Description 2N3011 SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a s...
Datasheet PDF File 2N3011 PDF File

2N3011
2N3011


Overview
2N3011 SILICON NPN TRANSISTOR w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications.
MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (tp=10μs) Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC 30 30 12 5.
0 200 500 360 1.
2 -65 to +200 486 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=20V ICES VCE=20V, TA=85°C BVCBO IC=10μA 30 BVCES IC=10μA 30 BVCEO IC=10mA 12 BVEBO IE=100μA 5.
0 VCE(SAT) IC=10mA, IB=1.
0mA VCE(SAT) IC=10mA, IB=1.
0mA, TA=85°C VCE(SAT) IC=30mA, IB=3.
0mA V...


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