N-Channel MOSFET. SI3400A Datasheet

SI3400A MOSFET. Datasheet pdf. Equivalent

Part SI3400A
Description N-Channel MOSFET
Feature Features • High Dense Cell Design for Extremely Low RDS(ON) • Exceptional On-Resistance and Maximum .
Manufacture MCC
Datasheet
Download SI3400A Datasheet




SI3400A
Features
High Dense Cell Design for Extremely Low RDS(ON)
Exceptional On-Resistance and Maximum DC Current Capability
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
SI3400A
N-Channel MOSFET
Maximum Ratings
• Operating Junction Temperature Range: -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 96°C/W Junction to Ambient(Note2)
Parameter
Symbol Rating
Unit
Drain -Source Voltage
VDS
30
V
Gate -Source Voltage
VGS
±12
V
Drain Current-Continuous
ID
5.8
A
Drain Current-Pulsed (Note1)
Power Dissipation
IDM
30
A
PD
1.3
W
Internal Structure
D
G
S
1. *$7E
2. 6285&(
3. '5$,1
Marking:R0A
SOT-23
A
D
3
12
F
E
CB
G
H
J
L
K
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51
L 0.007 0.020 0.20 0.50
NOTE
Suggested Solder Pad Layout
0.031
0.800
0.035
0.900
0.079
2.000
inches
mm
0.037
0.950
0.037
0.950
Rev.3-1-01012019
1/4
MCCSEMI.COM



SI3400A
SI3400A
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA
Gate-Threshold Voltage(Note3)
VGS(th) VDS=VGS, ID=250µA
Gate-Body Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-Resistance(Note3) RDS(on)
Forward Transconductance
gFS
Dynamic Characteristics(Note4)
VGS12V, VDS=0V
VDS=24V, VGS=0V
VGS=10V, ID=5.8A
VGS=4.5V, ID=5.0A
VGS=2.5V, ID=4.0A
VDS=5V, ID=5.0A
Input Capacitance
Output Capacitance
Ciss
Coss
VDS=15V,VGS=0V, f=1MHz
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VDS =0V,VGS =0V,f =1MHz
Switching Characteristics(Note4)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VGS=10V,RL=2.7Ω,VDS=15V, ,
RGEN=3Ω
Turn-Off Fall Time
tf
Drain-Source Diode Characteristics and Maximum Ratings
Diode Forward voltage(Note 3)
VSD
VGS=0V,IS=1A
Notes:
1.Repetitive Rating : Pulse width limited by maximum junction temperature.
2.Surface Mounted on FR4 Board, t < 5 sec.
3.Pulse Test: Pulse Width300μA, Duty Cycle2%.
4.Guaranteed by Design, Not Subject to Production Testing.
Min
30
0.7
8.0
Typ Max Unit
V
1.4
V
±100 nA
1
µA
29
32
32
38 mΩ
40
45
S
1155
108
pF
84
3.6
Ω
5
7
ns
40
6
1.0
V
Rev.3-1-01012019
2/4
MCCSEMI.COM







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