N-Channel MOSFET. 10N65 Datasheet

10N65 MOSFET. Datasheet pdf. Equivalent

Part 10N65
Description N-Channel MOSFET
Feature 10N65 650V N-Channel MOSFET. General Description ShenZhen LuGuang Electronic Technology. Co., Ltd. .
Manufacture LGE
Datasheet
Download 10N65 Datasheet



10N65
10N65
650V N-Channel MOSFET.
General Description
ShenZhen LuGuang Electronic Technology. Co., Ltd.
Awarded ISO9001:2015; ISO14001:2015; IATF16949:2016;
Email:sales05@lgesemi.com Web: www.lgesemi.com
Tel: 0086-755-23981105 Fax: 0086-755-23981125
Mobile/WhatsApp:+86-18676792337 Skype ID: jokucn
Features
• 10A, 650V, RDS(on)=0.63Ω @VGS=10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
This Power MOSFET is produced by HSDQ using its own advanced planar stripe DMOS
technology.This advanced technology has been especially tailored to minimize on-state
resistance,provide superior switching performance,and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for high efficiency
switched mode power supplies,active power factor correction based on half bridge topology.
TO-220F Package
2
1
12 3
1. Gate 2. Drain 3. Source
3
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC=25°C)
- Continuous (TC=100°C)
Drain Current - Pulsed (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
PD
Power Dissipation (TC=25°C)
- Derate above 25°C
Tj ,Tstg
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJS
Thermal Resistance, Case-to-Sink Typ.
RθJA
Thermal Resistance, Junction-to-Ambient
Value
650
10
6.3*
40*
± 30
606
10
55
5
27.5
0.22
-55 to +150
300
Value
4.54
--
42.2
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
oC
oC
Units
°C/W
°C/W
°C/W



10N65
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions Min
TaObflfeC2hMaraaxcimteurmistriactsings
BVDSS
ΔBVDSS
/ ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
VGS=0 V, ID=250 μA
650
ID=250 μA, Referenced
to 25°C
VDS=650 V, VGS=0 V
VDS=520 V, TC=125°C
IGSSF Gate-Body Leakage Current, Forward VGS=30 V, VDS=0 V
IGSSR Gate-Body Leakage Current, Reverse VGS=-30 V, VDS=0 V
On Characteristics
VGS(TH)
RDS(On)
Gate Threshold voltage
Drain-Source on-state resistance
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Switching Characteristics
VDS=VGS, ID=250 uA
2.0
VGS=10 V, ID=5 A,
TJ=25°C
VDS=40 V, ID=5 A
(Note 4)
VDS=25 V, VGS=0 V,
f=1.0 MHz
td(on)
Turn On Delay Time
tr
td(off)
Rising Time
Turn Off Delay Time
VDD=325 V, ID=10 A,
RG=25 Ω
(Note 4, 5)
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=520 V, ID=10 A,
VGS=10 V
(Note 4, 5)
3DrTahine-rSmouarlccehDairoadceteCrihsatriaccsteristics and Maximum Ratings
TableIS3 TheMrmaxaiml cuhmaCraocntteinruisoutiscsDrTaOin-S2o2u0rce Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Diode Forward Voltage
VGS=0 V, IS=10 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0 V, IS=10 A,
dIF / dt=100 A/μs
Note 4)
Typ
0.64
0.63
10.5
1998
174
12
24
37
114
43
45
11
17
520
4.3
Max
1
10
100
-100
4.0
0.81
10
40
1.2
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=12.1 mH, IAS=10 A, VDD=50V, RG=25 Ω, Starting TJ=25°C
3. ISD10A, di/dt 200A/us, VDD BVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width 300us, Duty cycle 2%
5. Essentially independent of operating temperature
Units
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)