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FDD3682

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDD3682 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Converters and off-line UPS ·High Voltage Synchronous Rectifier ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P...

INCHANGE

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