DatasheetsPDF.com

2SB1135

PNP Transistor

Description

isc Silicon PNP Power Transistor 2SB1135 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -4A ·Complement to Type 2SD1668 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, ...

INCHANGE

Download 2SB1135 Datasheet

Similar Datasheet

2SB1100 Silicon PNP Power Transistors - Inchange Semiconductor
2SB1101 PNP Transistor - Hitachi Semiconductor
2SB1101 SILICON POWER TRANSISTOR - SavantIC
2SB1101 PNP Transistor - INCHANGE
2SB1102 PNP Transistor - Hitachi Semiconductor
2SB1102 SILICON POWER TRANSISTOR - SavantIC
2SB1102 PNP Transistor - INCHANGE
2SB1103 PNP Transistor - Hitachi Semiconductor
2SB1103 PNP Transistor - INCHANGE
2SB1103 SILICON POWER TRANSISTOR - SavantIC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)