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2SB1136
PNP Transistor
Description
INCHANGE Semiconductor isc Silicon
PNP
Power
Transistor
2SB1136 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -6A ·Complement to Type 2SD1669 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers...
INCHANGE
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