isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as high-speed power switch at high
voltage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
...
