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MJ21194

NPN Transistor

Description

Silicon NPN Power Transistor MJ21194 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = 8A,VCE= 5V ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.4 V(Max)@ IC = 8A ·Complement to the PNP MJ21193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio ...

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