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MJH11012
NPN Transistor
Description
isc Silicon
NPN
Darlington Power
Transistor
MJH11012 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A ·Complement to the
PNP
MJ11011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP...
INCHANGE
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