isc Silicon PNP Power Transistors
2SB655
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·High Power Dissipation-
: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD675 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAX...
