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2SB686

PNP Transistor

Description

isc Silicon PNP Power Transistor 2SB686 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Complement to Type 2SD716 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 30~35W high-fidelity audio frequency amplifier outpu...

INCHANGE

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