isc Silicon PNP Power Transistor
2SB690
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -80V(Min) ·High Power Dissipation ·Complement to Type 2SD726 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM...
