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2SB1286

PNP Transistor

Description

isc Silicon PNP Darlington Power Transistor 2SB1286 DESCRIPTION ·High DC Current Gain- :hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A ·Complement to Type 2SD1646 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio...

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